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| Datasheet File OCR Text: |
| DC COMPONENTS CO., LTD. R BC184 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for general purpose amplifier applications. TO-92 Pinning 1 = Collector 2 = Base 3 = Emitter .190(4.83) .170(4.33) .190(4.83) .170(4.33) 2 Typ 2 Typ o o Absolute Maximum Ratings(TA=25oC) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PD TJ TSTG Rating 45 30 6 100 350 +150 -55 to +150 Unit V V V mA mW o o .500 Min (12.70) .022(0.56) .014(0.36) .100 Typ (2.54) .148(3.76) .132(3.36) .022(0.56) .014(0.36) .050 Typ (1.27) 321 C .050 o o 5 Typ. 5 Typ. (1.27) Typ Dimensions in inches and (millimeters) C Electrical Characteristics o Characteristic (Ratings at 25 C ambient temperature unless otherwise specified) Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat)1 VCE(sat)2 VBE(sat) VBE(on)1 VBE(on)2 VBE(on)3 hFE fT Cob 380s, Duty Cycle Min 45 30 6 0.55 240 150 2% Typ 0.07 0.2 0.5 0.62 0.83 - Max 15 15 0.25 0.6 1.2 0.7 900 5 Unit V V V nA nA V V V V V V MHz pF Test Conditions IC=10A, IE=0 IC=2mA, IB=0 IE=100A, IC=0 VCB=30V, IE=0 VEB=4V, IC=0 IC=10mA, IB=0.5mA IC=100mA, IB=5mA IC=100mA, IB=5mA IC=0.1mA, VCE=5V IC=2mA, VCE=5V IC=100mA, VCE=5V IC=2mA, VCE=5V IC=10mA, VCE=5V, f=100MHz VCB=10V, f=1MHz, IE=0 Collector-Base Breakdown Volatge Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Volatge Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage(1) Base-Emitter Saturation Voltage(1) Base-Emitter On Voltage(1) DC Current Gain (1) Transition Frequency Output Capacitance (1)Pulse Test: Pulse Width Classification of hFE Rank Range B 240~500 C 450~900 |
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